Заключение
В результате исследования был представлен алгоритм моделирования, позволяющий описать явления класса электропроводности, под действием стороннего поля. В том числе большое внимание было уделено непосредственной стадии моделирования в статичной форме полупроводниковому элементу типа n-p-n, состоящий из теллурида кадмия, оксида кремния и кристаллического кремния. Дальнейшие работы в настоящем направлении являются также актуальными, наряду с последующим сведением в аналитический вид комплексной сборки элементов и их комбинаций, участвующие в сборке исследованного в настоящей работе полупроводникового элемента.
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MODULAR APPARATUS FOR NUCLEAR REACTIONS SPECTROSCOPY (MARS)
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L. Garrido-Gómeza,∗, M. A. G. Alvareza, J. P. Fernández-Garcíaa, A. Vegas-Díaza, b, B. Fernándeza, b, F. J. Ferrera, b, D. Lopez-Airesc
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