Perovskite Materials for Energy and Environmental Applications. Группа авторов. Читать онлайн. Newlib. NEWLIB.NET

Автор: Группа авторов
Издательство: John Wiley & Sons Limited
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Жанр произведения: Техническая литература
Год издания: 0
isbn: 9781119763352
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so on. We can add other absorption files for other relevant materials.

      On the panel for cell definition, which opens the panel for the properties of contacts (Figure 1.5), you can configure the contact properties by either selecting the front or back contact button.

      The identification of each contact is made as follows:

       electron and hole surface recombination velocities,

       information about the metal work function.

Snapshot of the layer properties panel in SCAPS.

       Temperature, T: appropriate to all measurements. In SCAPS, the only variables that have an explicit dependence on temperature are NC(T), NV(T), and thermal voltage kBT.

       Voltage, V: is discarded in simulation of I-V and C-V. It is the voltage for dc-bias in simulation of C-f and simulation of QE(λ). SCAPS starts at 0V and proceeds through a series of steps at the point of operation, which we can also define.

       Frequency, f: is discarded in simulation of I-V, QE(λ) and C-f. It is the frequency of the simulation of the C-V measurement.

       Illumination, the illumination requirements can be further defined when simulating under illumination. The main options are: dark or light, light side choice (left/right), spectrum option. A single sun(=1000 W/m3) illumination with the “air mass.5, global” spectrum is the default, but for specialized simulations, we have a wide range of monochromatic light and spectra.

      In a diode, the current at n-contact is converted from the p-contact hole current to the electron current. It implies that recombination must occur somewhere in the diode, even in the most ideal device. The user must define recombination at least at one location (in a layer or interface) somewhere. Defects are most important parameters for study of solar cells. The following parameters identify defects in SCAPS:

       position of energy level in the gap,

       type of defect (i.e. acceptor, donor or neutral),

       thermal capture cross-section for electrons,

       thermal capture cross-section for holes,

       energetic distribution (single, uniform …),

       defect energy level reference (above EV or below EC),

       optical cross section of electrons,

       capture cross section of holes,

       concentration of defects.

Snapshot of energy bands panel window in SCAPS.

      Then from the right side of the screen window of the energy bands one can select choices (Gen-Rec, I-V). The behavior of the solar cell like the short circuit current (JSC) may be derived from the I-V curve. The results can be saved for further editing or use in other programs as ASCII files (e.g., Excel). It is broadly used for the simulation and analysis of different types of solar cells [46–49].

      From the study of these simulation softwares, it can be definitely said that simulation of perovskite solar cells can be used as a tool for designing and optimizing advanced perovskite solar cell structures and also to interpret the measurements made on different device structures. It can also be conclusively inferred that simulation can bring about better understanding of the detailed specifics of the working of perovskite solar cell structures. However, the simulation of perovskite solar cells requires a lot of input parameters, which makes it a tedious task.

      1. Neamen, D.A., Semiconductor physics and devices: basic principles, McGraw-Hill, New York, 2003.

      2. Mandadapu, U., Vedanayakam, S.V., Thyagarajan, K., Babu, B.J., Optimisation of high efficiency tin halide perovskite solar cells using SCAPS-1D. Int. J. Simul. Process Model., 13, 3, 221–227, 2018.

      3. Zeman, M., van den Heuvel, J., Pieters, B.E., Kroon, M., Willemen, J., Advanced semiconductor analysis, TU Delft, Delft, 2003.

      4. Pieters, B.E., Krc, J., Zeman, M., May. Advanced numerical simulation tool for solar cells-ASA5, in: 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, vol. 2, IEEE, pp. 1513–1516, 2006.

      5. Pieters, BE., Zeman, M., Metselaar, JW., Extraction of the defect density of states of a-Si:H using Q-DLTS. In s.n. (Ed.), Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005), 38–42, STW, 2005.

      6. Zeman, M., Willemen, J.A., Vosteen, L.L.A., Tao, G., Metselaar, J.W., Computer modelling of current matching in a-Si: H/a-Si: H tandem solar cells on textured TCO substrates. Sol. Energy Mater. Sol. Cells, 46, 2, 81–99, 1997.